Table 1. | Binding energiesa and atom concentration rateb of elements at as-received and sputter cleaned surface in XPS analysis |
| Atom | Control | Test | ||||||
| Beforec | Afterd | Beforec | Afterd | |||||
| at. % | BE | at. % | BE | at. % | BE | at. % | BE | |
| Ti | 12.5 | 458.8 | 19.3 | 458.8 | 10.0 | 458.8 | 17.9 | 458.9 |
| O | 55.8 | 530.2 | 67.9 | 530.3 | 53.1 | 531.5 | 60.7 | 530.5 |
| Mg | - | - | - | - | 6.9 | 50.4 | 9.2 | 50.5 |
| C | 31.3 | 284.8 | 12.8 | 284.8 | 27.9 | 284.8 | 9.8 | 284.8 |
| N | 0.4 | 400.2 | - | - | 2.1 | 400.3 | 1.6 | 400.4 |
aBinding energy value in eV.
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